| PART |
Description |
Maker |
| FLL200IB-3 FLL200IB-2 FLL200IB-1 |
L-Band Medium & High Power GaAs FET
L-Band Medium & High Power GaAs FET L波段中等
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
Sumitomo Electric Industries, Ltd.
|
| FLL177 FLL177ME |
L-BAND MEDIUM & HIGH POWER GAAS FET
|
Fujitsu Microelectronics
Fujitsu Limited
Fujitsu Media Devices Limited
Fujitsu Component Limited.
|
| FLL300IL-2 FLL300IL-3 |
L-Band Medium & High Power GaAs FET
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
| FLL351ME |
L-band medium & high power gaas FTEs
|
Fujitsu Component Limited.
Fujitsu Limited
FUJITSU[Fujitsu Media Devices Limited]
Fujitsu Microelectronics
|
| FLL120MK |
L-band Medium & High Power GAAS Fets
|
FUJITSU
Eudyna Devices Inc
|
| FLL200IB-1 FLL200IB-3 |
(FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET
|
Eudyna Devices
|
| MGA-545P8 MGA-545P8-TR2 MGA-545P8-TR2G |
50 MHz - 7000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8
MGA-545P8 · Low Current 22dBm Medium Power Amplifier In LPCC2x2 for 5-6GHz systems
|
Agilent Technologies, Inc.
Agilent (Hewlett-Packard)
|
| SST11LP1210 SST11LP12-QCF SST11LP12-10 |
4.9-5.8 GHz High-Linearity Power Amplifier
4900 MHz - 5800 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
Silicon Storage Technology, Inc
Microchip Technology Inc.
Silicon Storage Technol...
|
| MGFC5218 C5218A |
18000 MHz - 19000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
From old datasheet system
K-Band 2-Stage Power Amplifier
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGFC5213 C5213A |
From old datasheet system
K-Band 2-Stage Power Amplifier
27500 MHz - 30000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| AH1-PCB AH1-1 AH1-1G |
250 MHz - 3000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
High Dynamic Range Amplifier
|
WJCI[WJ Communication. Inc.]
|
